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PD25025F Datenblatt(PDF) 1 Page - TriQuint Semiconductor

Teilenummer PD25025F
Bauteilbeschribung  25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET
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Hersteller  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

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PD25025F
25 W, 2.3GHz - 2.5GHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The PD25025F is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(
2.3GHz - 2.5GHz Class AB wireless base station
LDMOS) RF power transistor suitable for
amplifier applications.
This device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver
-
ing a minimum output power of 25 W, it is ideally
suited for today's RF power amplifier applications.
Figure 1. Available Packages
Features
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
PD25025F (flanged)
Parameter
Sym
Value Unit
Thermal Resistance,
Junction to Case:
R JC
2.1
°C/W
Parameter
Sym Value Unit
Drain-source Voltage
VDSS
65
Vdc
Gate-source Voltage
VGS –0.5, +15 Vdc
Drain Current—Continuous
ID
4.25
Adc
Total Dissipation at TC = 25 °C: PD
120.7 W
Derate Above 25 °C:
0.69 W/°C
Operating Junction Tempera-
ture
TJ
200
°C
Storage Temperature Range TSTG –65, +150 °C
Minimum (V)
Class
HBM
500
1B
MM
50
A
CDM
1500
4
Application Specific Performance, 2.5 GHz
Typical 2-Tone Performance
Average Load Power – 12.5 W
ηD – 30%
Power Gain – 12.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
Typical CW Performance
Average Load Power – 25 W
ηD – 40%
Power Gain – 12.0 dB
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