Datenblatt-Suchmaschine für elektronische Bauteile |
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ST2300 Datenblatt(PDF) 2 Page - Stanson Technology |
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ST2300 Datenblatt(HTML) 2 Page - Stanson Technology |
2 / 7 page ST2300 N Channel Enhancement Mode MOSFET 4A 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2300 2005. V1 2 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ± 12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 4.0 3.0 A Pulsed Drain Current IDM 13 A Continuous Source Current (Diode Conduction) IS 1.0 A Power Dissipation TA=25℃ TA=70℃ PD 1.25 0.8 W Operation Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 140 ℃ /W |
Ähnliche Teilenummer - ST2300 |
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Ähnliche Beschreibung - ST2300 |
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