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1N18 Datenblatt(PDF) 1 Page - Shanghai Lunsure Electronic Tech

Teilenummer 1N18
Bauteilbeschribung  1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts
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Hersteller  CHENYI [Shanghai Lunsure Electronic Tech]
Direct Link  http://www.cnelectr.com
Logo CHENYI - Shanghai Lunsure Electronic Tech

1N18 Datenblatt(HTML) 1 Page - Shanghai Lunsure Electronic Tech

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1N17
THRU
1N19
1.0 Amp Schottky
Barrier Rectifier
20 to 40 Volts
Features
High Current Capability
Low Power loss
High Efficiency
Low Forward Voltage Drop
Metal Silicon junction, majority carrier conduction
Maximum Ratings
Operating Temperature: -55
°C to +125°C
Storage Temperature: -55
°C to +125°C
Typical Thermal Resistance: 50oC/W junction to Ambient
For capacitive load. Derate current by 20%
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum DC
Blocking
Voltage
1N17
20V
14V
20V
1N18
30V
21V
30V
1N19
40V
28V
40V
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Average Forward
Rectified Current
I(AV)
1.0A
TA = 90°C
Peak Forward Surge
Current
IFSM
25A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
1N17
1N18
1N19
VF
0.45V
0.55V
0.60V
IFM = 1.0A;
TC = 25°C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
0.5mA
10mA
TC = 25°C
TC = 100°C
Typical Junction
Capacitance
CJ
110pF
Measured at
1.0MHz, VR=4.0V
Note:
300 us pulse width, 1% duty cycle
A
B
D
D
C
Cathode Mark
MIN
MAX
MIN
MAX
A
0.116
0.140
2.90
3.50
B
0.091
0.102
2.30
2.60
C
0.020
0.024
0.50
0.60
D
0.787
-----
20.00
-----
DIMENSIONS
DIM
INCHES
MM
NOTE
R-1
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
www.cnelectr.com


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