Datenblatt-Suchmaschine für elektronische Bauteile |
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TA1322FN Datenblatt(PDF) 6 Page - Toshiba Semiconductor |
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TA1322FN Datenblatt(HTML) 6 Page - Toshiba Semiconductor |
6 / 21 page TA1322FN 2002-02-12 6 Absolute Maximum Ratings (Ta ==== 25°C) Parameter Pin No. Symbol Rating Unit 2 VCC1 6 9 VCC2 6 22 VCC3 6 Supply voltage 30 VCC4 6 V Tuning amplifier voltage 6 VBT 38 V Power dissipation ¾ PD 1130 (Note 2) mW Operating temperature ¾ Topr -20 to 85 °C Storage temperature ¾ Tstg -55 to 150 °C Note 2: 50 mm ´ 50 mm ´ 1.6 mm, 40% Cu board If Ta > 25°C, derate this value by 9.1 mW/°C. Recommended Operating Conditions Pin No. Symbol Min Typ. Max Unit 2 Local oscillator block VCC1 4.5 5.0 5.5 V 9 PLL block VCC2 4.5 5.0 5.5 V 22 IF amplifier block VCC3 4.5 5.0 5.5 V 30 Mixer block VCC4 4.5 5.0 5.5 V Electrical Characteristics DC Characteristics (unless otherwise specified, VCC1 ==== VCC2 ==== VCC3 ==== VCC4 ==== 5 V, Ta ==== 25°C) When power on, counter data ==== all [0], VBT ==== OFF, CP0 ==== 0, band ==== all [0], and IF output operate Pin 19. Parameter Symbol Test Circuit Test Condition Min Typ. Max Unit ICC1 ¾ 5.0 7.5 9.5 ICC2 ¾ 21.5 26.5 32.0 ICC3 ¾ 19.5 24.0 29.0 Power supply current ICC4 1 ¾ 10.0 12.5 15.5 mA Total ICC-total ¾ ¾ 56.0 70.0 86.0 mA |
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Ähnliche Beschreibung - TA1322FN |
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