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BTA30H-600CW3G Datenblatt(PDF) 2 Page - ON Semiconductor |
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BTA30H-600CW3G Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 6 page BTA30H−600CW3G, BTA30H−800CW3G http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient RqJC RqJA 1.8 60 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 150°C IDRM, IRRM − − − − 0.005 15 mA ON CHARACTERISTICS Peak On-State Voltage (Notes 2 and 3) (ITM = ±42 A Peak) VTM − − 1.55 V Threshold Voltage, TJ = 150°C (Note 2) Vto − − 0.85 V Dynamic Resistance, TJ = 150°C (Note 2) Rd − − 16 mW Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT 8.0 8.0 8.0 − − − 35 35 35 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = ±100 mA) IH − − 50 mA Latching Current (VD = 12 V, IG = 42 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL − − − − − − 75 75 75 mA Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGT − − − − − − 1.3 1.3 1.3 V Gate Non−Trigger Voltage (TJ = 150°C) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGD 0.15 0.15 0.15 − − − − − − V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 150°C, No Snubber) (Note 4) (dI/dt)c 4.0 − − A/ms Critical Rate of Rise of On−State Current (TJ = 150°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 50 A/ms Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 150°C) dV/dt 500 − − V/ms 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 3. For both polarities. 4. dv/dt(c) = 35 V/ms (exponential to 200 Vpk) |
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Ähnliche Beschreibung - BTA30H-600CW3G |
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