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BTA30H-800CW3G Datenblatt(PDF) 1 Page - ON Semiconductor

Teilenummer BTA30H-800CW3G
Bauteilbeschribung  Triacs Silicon Bidirectional Thyristors
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2009
April, 2009 − Rev. 0
1
Publication Order Number:
BTA30H−600CW3/D
BTA30H-600CW3G,
BTA30H-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 V
On-State Current Rating of 30 Amperes RMS at 95°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 500 V/ms minimum at 150°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package − Internally Isolated
High Commutating dI/dt − 4.0 A/ms minimum at 150°C
Internally Isolated (2500 VRMS)
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 150°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA30H−600CW3G
BTA30H−800CW3G
VDRM,
VRRM
600
800
V
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, TC = 95°C)
IT(RMS)
30
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
ITSM
400
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
667
A2sec
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/
VRSM
VDRM/VRRM
+100
V
Peak Gate Current (TJ = 150°C, t ≤ 20 ms)
IGM
4.0
A
Average Gate Power (TJ = 150°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ
−40 to +150
°C
Storage Temperature Range
Tstg
−40 to +150
°C
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso
2500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
30 AMPERES RMS
600 thru 800 VOLTS
TO−220AB
CASE 221A
STYLE 12
1
http://onsemi.com
HT
BTA30−xCWG
AYWW
MARKING
DIAGRAM
x
= 6 or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
2
3
Device
Package
Shipping
ORDERING INFORMATION
BTA30H−600CW3G
TO−220AB
(Pb−Free)
50 Units / Rail
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
No Connection
MT1
G
MT2
BTA30H−800CW3G
TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
4


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