Datenblatt-Suchmaschine für elektronische Bauteile |
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2N2647 Datenblatt(PDF) 2 Page - Comset Semiconductor |
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2N2647 Datenblatt(HTML) 2 Page - Comset Semiconductor |
2 / 3 page 2N2646 2N2647 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Min. Typ. Max. Unit 2N2646 0.56 - 0.75 η Intrinsic stand-off ratio VB2B1 = 10V 2N2647 0.68 - 0.82 - RBBO Interbase Resistance , VB2B1 = 3V 4.7 - 9.1 K Ω VEB1(sat) Emitter Saturation Voltage VB2B1 = 10V , IE = 50 mA - - 2.5 V IB2(MOD) Modulated Interbase Current VB2B1 = 10V , IE = 50 mA - 15 - V IEO Emitter Revers Current VB2E = 30 V , IB1 = 0 - - 12 µA V(BR)B1E Base 1 Emitter breakdown Voltage IE =100 µA 30 - - V 2N2646 4 - - IV Valley Current , VB2B1 = 20 V 2N2647 8 - - mA 2N2646 - - 5 IP Peak Current , VB2B1 = 25 V 2N2647 - - 2 µA |
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