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BTB1424N3 Datenblatt(PDF) 1 Page - Cystech Electonics Corp.

Teilenummer BTB1424N3
Bauteilbeschribung  Low VCE(sat) PNP Epitaxial Planar Transistor
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Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

BTB1424N3 Datenblatt(HTML) 1 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C817N3-R
Issued Date : 2003.04.03
Revised Date :2006.10.13
Page No. : 1/5
BTB1424N3
CYStek Product Specification
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424N3
Features
• Excellent DC current gain characteristics
• Low Saturation Voltage
VCE(sat)=-0.25V(typ)(IC=-2A, IB=-100mA).
• Complementary to BTD2150N3
• Pb-free package
Symbol
Outline
BTB1424N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current(DC)
IC
-3
Collector Current(Pulsed)(Note 1)
ICP
-7
A
Power Dissipation
Pd
0.9 (Note 2)
W
Thermal Resistance, Junction to Ambient
RθJA
138.9
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
2. Device mounted on a ceramic board ( 600mm²×0.8mm)


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