Datenblatt-Suchmaschine für elektronische Bauteile |
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BTB1580J3 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1580J3 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
1 / 6 page CYStech Electronics Corp. Spec. No. : C655J3 Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 1/6 BTB1580J3 CYStek Product Specification PNP Epitaxial Planar Transistor BTB1580J3 BVCEO -120V IC -4A RCESAT 600mΩ Description The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -120 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Current (Pulse) ICP -6 A Power Dissipation(TA=25℃) 1.5 W Power Dissipation(TC=25℃) Pd 20 W Thermal Resistance, Junction to Ambient RθJA 83.3 °C/W Thermal Resistance, Junction to Case RθJC 6.25 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : Single Pulse Pw≦300μs, Duty≦2%. BTB1580J3 B C E 8k ≒ 60 ≒ TO-252 B:Base C:Collector E:Emitter ≒ 6K B C E |
Ähnliche Teilenummer - BTB1580J3 |
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Ähnliche Beschreibung - BTB1580J3 |
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