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SM6K2 Datenblatt(PDF) 2 Page - Rohm

Teilenummer SM6K2
Bauteilbeschribung  4V Drive NchNch MOS FET
Download  5 Pages
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Hersteller  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

SM6K2 Datenblatt(HTML) 2 Page - Rohm

  SM6K2_1 Datasheet HTML 1Page - Rohm SM6K2_1 Datasheet HTML 2Page - Rohm SM6K2_1 Datasheet HTML 3Page - Rohm SM6K2_1 Datasheet HTML 4Page - Rohm SM6K2_1 Datasheet HTML 5Page - Rohm  
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SM6K2
Transistors
Rev.B
2/4
Electrical characteristics (Ta=25
°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter
Test Conditions
VGS
=0V
f
=1MHz
VDS
=10V
VGS
=10V
RL
=300Ω
RG
=10Ω
µA
pF
S
Unit
V
µA
V
pF
pF
ns
ns
ns
ns
nC
nC
ID
=200mA, VGS=10V
60
1
0.1
Min.
15
1.7
Typ.
8
4
6
5
12
95
0.3
0.6
±10
1
2.5
2.4
ID
=200mA, VGS=4V
2.8
4.0
Max.
VDS
=10V, ID=200mA
ID
=1mA, VGS=0V
VGS
=±20V, VDS=0V
VDS
=60V, VGS=0V
VDS
=10V, ID=1mA
nC
ID
=200mA
VGS
=10V
2.2
4.4
∗ Pulsed
IGSS
IDSS
l Yfs l
Ciss
Symbol
Coss
Crss
tr
tf
Qgd
Qgs
Qg
V (BR) DSS
VGS (th)
RDS (on)
td (on)
td (off)
ID
=100mA, VDD 30V
VDD 30V
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Body diode characteristics (Source-drain) (Ta=25
°C)
<It is the same characteristics for the Tr1 and Tr2.>
VSD
−−
1.2
V
Forward voltage
IS=200mA, VGS=0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions


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