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IRLR8256TRPBF Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRLR8256TRPBF
Bauteilbeschribung  HEXFET Power MOSFET
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLR8256TRPBF Datenblatt(HTML) 2 Page - International Rectifier

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IRLR/U8256PbF
2
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Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––18––– mV/°C
–––
4.2
5.7
–––
6.7
8.5
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-7.2
––– mV/°C
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
81
–––
–––
S
Qg
Total Gate Charge
–––
10
15
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.3
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
1.6
–––
nC
Qgd
Gate-to-Drain Charge
–––
3.6
–––
Qgodr
Gate Charge Overdrive
–––
2.6
–––
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
–––
5.1
–––
Qoss
Output Charge
–––
9.0
–––
nC
RG
Gate Resistance
–––
2.5
3.9
td(on)
Turn-On Delay Time
–––
9.7
–––
tr
Rise Time
–––46–––
td(off)
Turn-Off Delay Time
–––12–––
tf
Fall Time
–––
8.5
–––
Ciss
Input Capacitance
–––
1470
–––
Coss
Output Capacitance
–––
453
–––
Crss
Reverse Transfer Capacitance
–––
185
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
™
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
1929ns
Qrr
Reverse Recovery Charge
–––
17
26
nC
ton
Forward Turn-On Time
IGSS
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
m
81
f
325
µA
nA
ns
pF
A
Conditions
6.3
See Fig. 14
Max.
86
20
ƒ = 1.0MHz
VGS = 4.5V, ID = 20A e
VGS = 20V
VGS = -20V
VDS = 13V, ID = 20A
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A
e
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5Ve
VDS = VGS, ID = 25µA
RG = 1.8Ω
VDS = 13V
ID = 20A
TJ = 25°C, IF = 20A, VDD = 13V
di/dt = 300A/µs
e
TJ = 25°C, IS = 20A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
–––
VGS = 4.5V
Typ.
–––
–––
ID = 20A
VGS = 0V
VDS = 13V


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