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74AHCT1G86 Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer 74AHCT1G86
Bauteilbeschribung  2-input EXCLUSIVE-OR gate
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74AHCT1G86 Datenblatt(HTML) 6 Page - NXP Semiconductors

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74AHC_AHCT1G86_5
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 05 — 4 July 2007
6 of 12
NXP Semiconductors
74AHC1G86; 74AHCT1G86
2-input EXCLUSIVE-OR gate
[1]
tpd is the same as tPLH and tPHL.
[2]
Typical values are measured at VCC = 3.3 V.
[3]
Typical values are measured at VCC = 5.0 V.
[4]
CPD is used to determine the dynamic power dissipation PD (µW).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
12. Waveforms
For type 74AHCT1G86
tpd
propagation
delay
A and B to Y
[1]
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
-
3.5
6.9
1.0
8.0
1.0
9.0
ns
CL = 50 pF
-
5.0
7.9
1.0
9.0
1.0
10.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL =50pF;f=1 MHz;
VI = GND to VCC
[4]
-11-
-
-
-
-
pF
Table 8.
Dynamic characteristics …continued
GND = 0 V; tr = tf = ≤ 3.0 ns. For waveform see Figure 5. For test circuit see Figure 6.
Symbol Parameter
Conditions
25
°C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
Measurement points are given in Table 9.
Fig 5.
The input (A and B) to output (Y) propagation delays
mna041
tPHL
tPLH
VM
VM
A, B input
Y output
Table 9.
Measurement points
Type
Input
Output
VI
VM
VM
74AHC1G86
GND to VCC
0.5
× VCC
0.5
× VCC
74AHCT1G86
GND to 3.0 V
1.5 V
0.5
× V
CC


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