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74AHCT2G241 Datenblatt(PDF) 7 Page - NXP Semiconductors

Teilenummer 74AHCT2G241
Bauteilbeschribung  Dual buffer/line driver; 3-state
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74AHCT2G241 Datenblatt(HTML) 7 Page - NXP Semiconductors

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74AHC_AHCT2G241_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 13 January 2009
7 of 16
NXP Semiconductors
74AHC2G241; 74AHCT2G241
Dual buffer/line driver; 3-state
[1]
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[2]
Typical values are measured at VCC = 3.3 V.
[3]
Typical values are measured at VCC = 5.0 V.
[4]
CPD is used to determine the dynamic power dissipation PD (µW).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
ten
enable time
1OE to 1Y; see Figure 6
[1]
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
-
3.9
5.1
1.0
6.0
1.0
6.5
ns
CL = 50 pF
-
5.1
7.5
1.0
8.5
1.0
9.5
ns
2OE to 2Y; see Figure 7
[1]
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
-
3.4
5.6
1.0
6.3
1.0
6.5
ns
CL = 50 pF
-
4.8
7.5
1.0
9.0
1.0
9.5
ns
tdis
disable time
1OE to 1Y; see Figure 6
[1]
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
-
4.5
6.8
1.0
8.0
1.0
8.5
ns
CL = 50 pF
-
6.1
8.8
1.0
10.0
1.0
11.0
ns
2OE to 2Y; see Figure 7
[1]
VCC = 4.5 V to 5.5 V
[3]
CL = 15 pF
-
4.0
6.8
1.0
8.0
1.0
8.5
ns
CL = 50 pF
-
5.7
8.8
1.0
10.0
1.0
11.0
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; fi = 1 MHz;
VI = GND to VCC
[4]
-10-
-
-
-
-
pF
Table 8.
Dynamic characteristics …continued
GND = 0 V; for test circuit see Figure 8.
Symbol Parameter
Conditions
25
°C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max


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