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74AHCT3G14DC Datenblatt(PDF) 4 Page - NXP Semiconductors

Teilenummer 74AHCT3G14DC
Bauteilbeschribung  Inverting Schmitt trigger
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74AHCT3G14DC Datenblatt(HTML) 4 Page - NXP Semiconductors

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74AHC_AHCT3G14_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 5 May 2009
4 of 16
NXP Semiconductors
74AHC3G14; 74AHCT3G14
Inverting Schmitt trigger
9.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For TSSOP8 package: above 55
°C the value of P
tot derates linearly at 2.5 mW/K.
For VSSOP8 package: above 110
°C the value of P
tot derates linearly at 8 mW/K.
For XSON8U packages: above 118
°C the value of P
tot derates linearly with 7.8 mW/K.
10. Recommended operating conditions
11. Static characteristics
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+7.0
V
VI
input voltage
−0.5
+7.0
V
IIK
input clamping current
VI < −0.5 V
−20
-
mA
IOK
output clamping current
VO < −0.5 V or VO >VCC + 0.5 V
[1] -
±20
mA
IO
output current
−0.5 V < V
O <VCC + 0.5 V
-
±25
mA
ICC
supply current
-
75
mA
IGND
ground current
−75
-
mA
Tstg
storage temperature
−65
+150
°C
Ptot
total power dissipation
Tamb = −40 °C to +125 °C
[2] -
250
mW
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
74AHC3G14
74AHCT3G14
Unit
Min
Typ
Max
Min
Typ
Max
VCC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
VI
input voltage
0
-
5.5
0
-
5.5
V
VO
output voltage
0
-
VCC
0-
VCC
V
Tamb
ambient temperature
−40
+25
+125
−40
+25
+125
°C
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25
°C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
74AHC3G14
VOH
HIGH-level
output voltage
VI = VT+ or VT−
IO = −50 µA; VCC = 2.0 V
1.9
2.0
-
1.9
-
1.9
-
V
IO = −50 µA; VCC = 3.0 V
2.9
3.0
-
2.9
-
2.9
-
V
IO = −50 µA; VCC = 4.5 V
4.4
4.5
-
4.4
-
4.4
-
V
IO = −4.0 mA; VCC = 3.0 V
2.58
-
-
2.48
-
2.40
-
V
IO = −8.0 mA; VCC = 4.5 V
3.94
-
-
3.8
-
3.70
-
V


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