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74HC1G04 Datenblatt(PDF) 5 Page - NXP Semiconductors |
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74HC1G04 Datenblatt(HTML) 5 Page - NXP Semiconductors |
5 / 11 page 74HC_HCT1G04_4 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 — 16 July 2007 5 of 11 NXP Semiconductors 74HC1G04; 74HCT1G04 Inverter 11. Dynamic characteristics [1] tpd is the same as tPLH and tPHL. [2] CPD is used to determine the dynamic power dissipation PD (µW). PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts ∑ (C L × VCC 2 × f o) = sum of outputs ICC supply current VI =VCC or GND; IO =0A; VCC = 5.5 V - - 10 - 20 µA ∆ICC additional supply current per input; VCC = 4.5 V to 5.5 V; VI =VCC − 2.1 V; IO =0A - - 500 - 850 µA CI input capacitance - 1.5 - - - pF Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 °C. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Table 8. Dynamic characteristics GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb =25 °C. For test circuit see Figure 6 Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max For type 74HC1G04 tpd propagation delay A to Y; see Figure 5 [1] VCC = 2.0 V; CL = 50 pF - 25 105 - 135 ns VCC = 4.5 V; CL =50pF - 9 21 - 27 ns VCC = 5.0 V; CL =15pF - 7 - - - ns VCC = 6.0 V; CL =50pF - 8 18 - 23 ns CPD power dissipation capacitance VI = GND to VCC [2] -16- - - pF For type 74HCT1G04 tpd propagation delay A to Y; see Figure 5 [1] VCC = 4.5 V; CL = 50 pF - 10 24 - 27 ns VCC = 5.0 V; CL =15pF - 8 - - - ns CPD power dissipation capacitance VI = GND to VCC − 1.5 V [2] -18- - - pF |
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Ähnliche Beschreibung - 74HC1G04 |
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