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BC546 Datenblatt(PDF) 7 Page - NXP Semiconductors

Teilenummer BC546
Bauteilbeschribung  65 V, 100 mA NPN general-purpose transistors
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BC546 Datenblatt(HTML) 7 Page - NXP Semiconductors

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BC846_BC546_SER_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 17 November 2009
7 of 14
NXP Semiconductors
BC846/BC546 series
65 V, 100 mA NPN general-purpose transistors
VCE =5V
(1) Tamb = 150 °C
(2) Tamb =25 °C
(3) Tamb = −55 °C
VCE =5V
(1) Tamb = −55 °C
(2) Tamb =25 °C
(3) Tamb = 150 °C
Fig 5.
Selection B: DC current gain as a function of
collector current; typical values
Fig 6.
Selection B: Base-emitter voltage as a function
of collector current; typical values
IC/IB =20
(1) Tamb = 150 °C
(2) Tamb =25 °C
(3) Tamb = −55 °C
IC/IB =10
(1) Tamb = −55 °C
(2) Tamb =25 °C
(3) Tamb = 150 °C
Fig 7.
Selection B: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8.
Selection B: Base-emitter saturation voltage
as a function of collector current; typical
values
mgt727
10−1
110
102
103
IC (mA)
0
600
500
400
300
200
100
hFE
(1)
(2)
(3)
0
1200
1000
800
600
400
200
mgt728
10−2
10−1
110
102
103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
104
103
102
10
mgt729
10−1
110
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
mgt730
10−1
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)


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