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BC546B Datenblatt(PDF) 5 Page - NXP Semiconductors |
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BC546B Datenblatt(HTML) 5 Page - NXP Semiconductors |
5 / 14 page BC846_BC546_SER_7 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 07 — 17 November 2009 5 of 14 NXP Semiconductors BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. [2] VBEsat decreases by approximately 1.7 mV/K with increasing temperature. [3] VBE decreases by approximately 2 mV/K with increasing temperature. Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB =30V; IE =0A - - 15 nA VCB =30V; IE =0A; Tj = 150 °C -- 5 μA IEBO emitter-base cut-off current VEB =5V; IE = 0 A - - 100 nA hFE DC current gain hFE group A VCE =5V; IC =10 μA- 180 - hFE group B VCE =5V; IC =10 μA- 290 - DC current gain VCE =5V; IC = 2 mA 110 - 450 hFE group A VCE =5V; IC = 2 mA 110 180 220 hFE group B VCE =5V; IC = 2 mA 200 290 450 VCEsat collector-emitter saturation voltage IC =10mA; IB = 0.5 mA - 90 200 mV IC = 100 mA; IB =5mA [1] - 200 400 mV VBEsat base-emitter saturation voltage IC =10mA; IB =0.5 mA [2] -760 - mV IC = 100 mA; IB =5mA [2] -900 - mV VBE base-emitter voltage IC =2mA; VCE =5 V [3] 580 660 700 mV IC =10mA; VCE =5V [3] - - 770 mV fT transition frequency VCE =5V; IC =10 mA; f = 100 MHz 100 - - MHz Cc collector capacitance VCB =10V; IE =ie =0A; f= 1MHz -2 3 pF Ce emitter capacitance VEB =0.5 V; IC =ic =0A; f= 1MHz -11 - pF NF noise figure IC = 200 μA; VCE =5V; RS =2kΩ; f = 1 kHz; B=200 Hz - 2 10 dB |
Ähnliche Teilenummer - BC546B |
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Ähnliche Beschreibung - BC546B |
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