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BTA312 Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer BTA312
Bauteilbeschribung  12 A Three-quadrant triacs high commutation
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BTA312 Datenblatt(HTML) 6 Page - NXP Semiconductors

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BTA312_SER_D_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2007
6 of 12
NXP Semiconductors
BTA312 series D and E
12 A Three-quadrant triacs high commutation
6.
Static characteristics
Table 5.
Static characteristics
Tj =25 °C unless otherwise specified.
Symbol Parameter
Conditions
BTA312-600D
BTA312-600E
BTA312-800E
Unit
Min
Typ
Max
Min
Typ
Max
IGT
gate trigger
current
VD =12V; IT = 0.1 A; see Figure 8
T2+ G+
-
-
5
-
-
10
mA
T2+ G
--5
--10
mA
T2
− G−
--5
--10
mA
IL
latching current VD =12V; IGT = 0.1 A; see Figure 10
T2+ G+
-
-
10
-
-
25
mA
T2+ G
--15
--30
mA
T2
− G−
--15
--25
mA
IH
holding current
VD =12V; IGT = 0.1 A; see Figure 11
--10
--15
mA
VT
on-state
voltage
IT = 15 A; see Figure 9
-
1.3
1.6
-
1.3
1.6
V
VGT
gate trigger
voltage
VD =12V; IT = 0.1 A; see Figure 7
-
0.7
1.5
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C
0.25
0.4
-
0.25
0.4
-
V
ID
off-state current VD =VDRM(max); Tj = 125 °C
-
0.1
0.5
-
0.1
0.5
mA


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