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BTA312B-800ET Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BTA312B-800ET Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 12 page BTA312B_SER_CT_ET_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 11 April 2007 3 of 12 NXP Semiconductors BTA312B series CT and ET 12 A Three-quadrant triacs high commutation high temperature α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aab690 0 4 8 12 16 0369 12 IT(RMS) (A) Ptot (W) α = 180° 120 ° 90 ° 60 ° 30 ° conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α 003aab680 0 20 40 60 80 100 1 10 10 2 10 3 number of cycles (n) ITSM (A) ITSM t IT Tj(init) = 25 °C max 1/f |
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