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BTA316-600ET Datenblatt(PDF) 6 Page - NXP Semiconductors |
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BTA316-600ET Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 13 page BTA316-600ET_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 30 March 2010 6 of 13 NXP Semiconductors BTA316-600ET 16 A three-quadrant high commutation triac 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD =12V; IT = 0.1 A; T2+ G+; Tj =25°C; see Figure 7 -- 10 mA VD =12V; IT = 0.1 A; T2+ G-; Tj =25°C; see Figure 7 -- 10 mA VD =12V; IT = 0.1 A; T2- G-; Tj =25°C; see Figure 7 -- 10 mA IL latching current VD =12V; IG = 0.1 A; T2+ G+; Tj =25°C; see Figure 8 -- 25 mA VD =12V; IG = 0.1 A; T2+ G-; Tj =25°C; see Figure 8 -- 30 mA VD =12V; IG = 0.1 A; T2- G-; Tj =25°C; see Figure 8 -- 30 mA IH holding current VD =12V; Tj =25 °C; see Figure 9 -- 15 mA VT on-state voltage IT =18A; Tj = 25 °C; see Figure 10 -1.3 1.5 V VGT gate trigger voltage VD =12V; IT = 0.1 A; Tj =25°C; see Figure 11 -0.8 1.5 V VD =400 V; IT = 0.1 A; Tj =150 °C; see Figure 11 0.25 - - V ID off-state current VD =600 V; Tj = 150 °C - 0.24 1.2 mA Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM =402 V; Tj = 150 °C; exponential waveform 20 - - V/µs dIcom/dt rate of change of commutating current VD =400 V; Tj = 150 °C; IT(RMS) =16A; dVcom/dt = 10 V/µs; gate open circuit 1.2 - - A/ms VD =400 V; Tj = 150 °C; IT(RMS) =16A; dVcom/dt = 20 V/µs; "without snubber" condition; gate open circuit 0.8 - - A/ms VD 400 V; Tj = 150 °C; IT(RMS) =16A; dVcom/dt = 1 V/µs; gate open circuit 6- - A/ms tgt gate-controlled turn-on time ITM =20A; VD = 600 V; IG =0.1 A; dIG/dt = 5 A/µs -2 -µs |
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