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BTA316-800ET Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BTA316-800ET
Bauteilbeschribung  16 A three-quadrant high commutation triac
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BTA316-800ET_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 March 2010
2 of 13
NXP Semiconductors
BTA316-800ET
16 A three-quadrant high commutation triac
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
T1
main terminal 1
SOT78 (TO-220AB)
2
T2
main terminal 2
3G
gate
mb
T2
mounting base; main terminal 2
12
mb
3
sym051
T1
G
T2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BTA316-800ET
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state
voltage
-800
V
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 126 °C; see Figure 3, 1 and 2
-16
A
ITSM
non-repetitive peak
on-state current
full sine wave; Tj(init) =25°C; tp = 20 ms;
see Figure 4 and 5
-140
A
full sine wave; Tj(init) =25°C; tp =16.7ms
-
150
A
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
-
98
A2s
dIT/dt
rate of rise of on-state
current
IT =20A; IG = 0.2 A; dIG/dt = 0.2 A/µs
-
100
A/µs
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
150
°C


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