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BTA316-800ET Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BTA316-800ET Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 13 page BTA316-800ET_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 29 March 2010 3 of 13 NXP Semiconductors BTA316-800ET 16 A three-quadrant high commutation triac Fig 1. RMS on-state current as a function of surge duration; maximum values Fig 2. RMS on-state current as a function of mounting base temperature; maximum values Fig 3. Total power dissipation as a function of RMS on-state current; maximum values 003aab685 0 10 20 30 40 50 60 10 -2 10 -1 1 10 surge duration (s) IT(RMS) (A) 003aab777 0 4 8 12 16 20 -50 0 50 100 150 Tmb ( °C) IT(RMS) (A) 003aab689 0 5 10 15 20 02 46 8 10 12 14 16 IT(RMS) (A) Ptot (W) α= 180° 120 ° 90 ° 60 ° 30 ° conduction angle, (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α |
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