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BTA316-800ET Datenblatt(PDF) 1 Page - NXP Semiconductors

Teilenummer BTA316-800ET
Bauteilbeschribung  16 A three-quadrant high commutation triac
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BTA316-800ET Datenblatt(HTML) 1 Page - NXP Semiconductors

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BTA316-800ET
16 A three-quadrant high commutation triac
Rev. 01 — 29 March 2010
Product data sheet
1.
Product profile
1.1 General description
Planar passivated, new generation, high commutation, high operating junction
temperature, three-quadrant triac in a SOT78 plastic package.
1.2 Features and benefits
Hi-Com triac with maximum false
trigger immunity
High operating junction temperature
Planar passivated
Sensitive gate for direct triggering from
microcontrollers and logic ICs
Triggering in three quadrants only
1.3 Applications
Applications subject to high
temperature
Electronic thermostats, heating and
cooking controls
High power motor controls in washing
machines and vacuum cleaners
Refrigeration and air-conditioner
compressor controls
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VDRM
repetitive peak
off-state voltage
-
-
800
V
ITSM
non-repetitive peak
on-state current
full sine wave; Tj(init) =25°C;
tp = 20 ms; see Figure 4 and 5
-
-
140
A
Tj
junction temperature
-
-
150
°C
IT(RMS)
RMS on-state
current
full sine wave; Tmb ≤ 126 °C;
see Figure 3, 1 and 2
--16
A
Static characteristics
IGT
gate trigger current
VD =12V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
--10
mA
VD =12V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
--10
mA
VD =12V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
--10
mA


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