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STPSC606 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer STPSC606
Bauteilbeschribung  600 V power Schottky silicon carbide diode
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
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STPSC606 Datenblatt(HTML) 1 Page - STMicroelectronics

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September 2009
Doc ID 16284 Rev 1
1/8
8
STPSC606
600 V power Schottky silicon carbide diode
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC boost diode
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
Table 1.
Device summary
IF(AV)
6 A
VRRM
600 V
Tj (max)
175 °C
QC (typ)
6 nC
K
K
A
K
A
NC
TO-220AC
STPSC606D
D2PAK
STPSC606G
www.st.com


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