PZT4403_10 datasheet(3/9 Pages) NXP

Teilenummer	PZT4403

Bauteilbeschribung	40 V, 600 mA PNP switching transistor

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PZT4403_3

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Product data sheet

Rev. 03 — 2 March 2010

3 of 9

NXP Semiconductors

PZT4403

40 V, 600 mA PNP switching transistor

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

Table 7.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base

cut-off current

VCB = −40 V; IE =0A

-

−50

nA

IEBO

emitter-base

cut-off current

VEB = −5V; IC =0A

-

−50

nA

hFE

DC current gain

VCE = −1V;

IC = −0.1 mA

30

-

VCE = −1V;

IC = −1mA

60

-

VCE = −1V;

IC = −10 mA

100

-

VCE = −1V;

IC = −150 mA

[1] 100

-

300

VCE = −2V;

IC = −500 mA

[1] 20

-

VCEsat

collector-emitter

saturation voltage

IC = −150 mA;

IB = −15 mA

[1] --

−400

mV

IC = −500 mA;

IB = −50 mA

[1] --

−750

mV

VBEsat

base-emitter

saturation voltage

IC = −150 mA;

IB = −15 mA

[1] --

−950

mV

IC = −500 mA;

IB = −50 mA

[1] --

−1300 mV

td

delay time

VCC = −29.5 V;

IC = −150 mA;

IBon = −15 mA;

IBoff =15mA;

VBB =3.5 V

--

15

ns

tr

rise time

-

30

ns

ton

turn-on time

-

40

ns

ts

storage time

-

300

ns

tf

fall time

-

50

ns

toff

turn-off time

-

350

ns

fT

transition frequency

VCE = −10 V;

IC = −20 mA;

f=100MHz

200

-

MHz

Cc

collector capacitance

VCB = −5V;

IE =ie =0A;

f=1MHz

--

8.5

pF

Ce

emitter capacitance

VEB = −500 mV;

IC =ic =0A;

f=1MHz

--

35

pF

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