Datenblatt-Suchmaschine für elektronische Bauteile |
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GS1K-E Datenblatt(PDF) 1 Page - Gulf Semiconductor |
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GS1K-E Datenblatt(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page Rev.A1 www.gulfsemi.com GS1J-E THRU GS1M-E SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE: : : :600V to 1000V CURRENT: : : : 1.0A FEATURE SMA/ / / /DO-214AC Ideal for surface mount pick and place application Low profile package Built-in strain relief High surge capability High temperature soldering guaranteed 260℃/10sec/at terminals Halogen Free MECHANICAL DATA Terminal:Plated axial leads solderable per MIL-STD 202E, method 208C Case : Molded with UL-94 class V-0 recognized Halogen Free Epoxy Polarity:color band denotes cathode Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated, for capacitive load, derate current by 20%) SYMBOL GS1J-E GS1K-E GS1M-E units Maximum Recurrent Peak Reverse Voltage Vrrm 600 800 1000 V Maximum RMS Voltage Vrms 420 560 700 V Maximum DC blocking Voltage Vdc 600 800 1000 V Maximum Average Forward Rectified Current 3/8″lead length If(av) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 30.0 A Maximum Instantaneous Forward Voltage at rated Forward current Vf 1.1 V Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =125℃ Ir 5.0 200.0 µ A Typical Junction Capacitance (Note 1) Cj 15.0 pF Typical Thermal Resistance (Note 2) (Note 3) Rth(jl) Rth(jc) 30 50 ℃/W Storage and Operating Junction Temperature Tj, Tstg -50 to +150 ℃ Note: 1. Measured at 1.0 MHz and applied voltage of 4.0Vdc 2. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area 3. Junction to Case |
Ähnliche Teilenummer - GS1K-E |
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Ähnliche Beschreibung - GS1K-E |
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