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TS5A23157DGSTE4 Datenblatt(PDF) 10 Page - Texas Instruments

Teilenummer TS5A23157DGSTE4
Bauteilbeschribung  DUAL 10-廓 SPDT ANALOG SWITCH
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TS5A23157
SCDS165D – MAY 2004 – REVISED MAY 2008 ................................................................................................................................................................ www.ti.com
PIN DESCRIPTION
PIN NO.
NAME
DESCRIPTION
1
IN1
Digital control to connect COM to NO or NC
2
NO1
Normally open
3
GND
Digital ground
4
NO2
Normally open
5
IN2
Digital control to connect COM to NO or NC
6
COM2
Common
7
NC2
Normally closed
8
V+
Power supply
9
NC1
Normally closed
10
COM1
Common
PARAMETER DESCRIPTION
SYMBOL
DESCRIPTION
VCOM
Voltage at COM
VNC
Voltage at NC
VNO
Voltage at NO
ron
Resistance between COM and NC or COM and NO ports when the channel is ON
Δron
Difference of ron between channels
ron(flat)
Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under
INC(OFF)
worst-case input and output conditions
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under
INO(OFF)
worst-case input and output conditions
Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output
INC(ON)
(COM) being open
Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output
INO(ON)
(COM) being open
Leakage current measured at the COM port, with the corresponding channel (NO to COM or NC to COM) in the ON state
ICOM(ON)
and the output (NC or NO) being open
VIH
Minimum input voltage for logic high for the control input (IN)
VIL
Minimum input voltage for logic low for the control input (IN)
VIN
Voltage at IN
IIH, IIL
Leakage current measured at IN
Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation
tON
delay between the digital control (IN) signal and analog outputs (COM/NC/NO) signal when the switch is turning ON.
Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation
tOFF
delay between the digital control (IN) signal and analog outputs (COM/NC/NO) signal when the switch is turning OFF.
Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation
tBBM
delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state.
Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or
QC
COM) output. This is measured in coulombs ) and measured by the total charge induced due to switching of the control
input. Charge injection, QC = CL× ΔVO, CL is the load capacitance and ΔVO is the change in analog output voltage.
CNC(OFF)
Capacitance at the NC port when the corresponding channel (NC to COM) is OFF
CNO(OFF)
Capacitance at the NO port when the corresponding channel (NC to COM) is OFF
CNC(ON)
Capacitance at the NC port when the corresponding channel (NC to COM) is ON
CNO(ON)
Capacitance at the NO port when the corresponding channel (NC to COM) is ON
CCOM(ON)
Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON
CIN
Capacitance of IN
OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific
OISO
frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state. OFF isolation, OISO = 20 LOG
(VNC/VCOM) dB, VCOM is the input and VNC is the output.
10
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