Z0103MNT1G datasheet(3/8 Pages) ONSEMI

Teilenummer	Z0103MNT1G

Bauteilbeschribung	Sensitive Gate Triac Series Silicon Bidirectional Thyristors

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Hersteller	ONSEMI [ON Semiconductor]

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Z0103MN, Z0107MN, Z0109MN

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3

+ Current

+ Voltage

VTM

IH

Symbol

Parameter

VDRM

Peak Repetitive Forward Off State Voltage

IDRM

Peak Forward Blocking Current

VRRM

Peak Repetitive Reverse Off State Voltage

IRRM

Peak Reverse Blocking Current

Voltage Current Characteristic of Triacs

(Bidirectional Device)

IDRM at VDRM

on state

off state

IRRM at VRRM

Quadrant 1

MainTerminal 2 +

Quadrant 3

MainTerminal 2 −

VTM

IH

VTM

Maximum On State Voltage

IH

Holding Current

MT1

(+) IGT

GATE

(+) MT2

REF

MT1

(−) IGT

GATE

(+) MT2

REF

MT1

(+) IGT

GATE

(−) MT2

REF

MT1

(−) IGT

GATE

(−) MT2

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

MT2 POSITIVE

(Positive Half Cycle)

+

Quadrant III

Quadrant IV

Quadrant II

Quadrant I

Quadrant Definitions for a Triac

IGT −

+ IGT

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

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