Datenblatt-Suchmaschine für elektronische Bauteile |
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KM416C254D Datenblatt(PDF) 6 Page - Samsung semiconductor |
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KM416C254D Datenblatt(HTML) 6 Page - Samsung semiconductor |
6 / 36 page KM416C254D, KM416V254D CMOS DRAM AC CHARACTERISTICS (Continued) Note) *1 : 5V only Parameter Symbol -5*1 -6 -7 Units Notes Min Max Min Max Min Max Data set-up time tDS 0 0 0 ns 9,19 Data hold time tDH 8 10 15 ns 9,19 Refresh period (Normal) tREF 8 8 8 ms Refresh period (L-ver) tREF 128 128 128 ms CAS to W delay time tCWD 32 32 42 ns 7,15 RAS to W delay time tRWD 67 77 92 ns 7 Column address to W delay time tAWD 42 47 57 ns 7 CAS precharge to W delay time tCPWD 45 52 62 ns 7 CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 5 ns 17 CAS hold time (CAS -before-RAS refresh) tCHR 10 10 10 ns 18 RAS to CAS precharge time tRPC 5 5 5 ns CAS precharge time (C-B-R counter test cycle) tCPT 20 20 25 ns Access time from CAS precharge tCPA 28 35 40 ns 3 Hyper Page mode cycle time tHPC 20 25 30 ns 11 Hyper Page read-modify-write cycle time tHPRWC 57 66 81 ns 11 CAS precharge time (Hyper Page cycle) tCP 8 10 10 ns 14 RAS pulse width (Hyper Page cycle) tRASP 50 100K 60 100K 70 100K ns RAS hold time from CAS precharge tRHCP 30 35 40 ns OE access time tOEA 15 15 20 ns 3 OE to data delay tOED 13 13 18 ns Output buffer turn off delay time from OE tOEZ 3 13 3 13 3 18 ns 6 OE command hold time tOEH 15 15 20 ns Output data hold time tDOH 5 5 5 ns Output buffer turn off delay from RAS tREZ 3 15 3 15 3 20 ns 6,12 Output buffer turn off delay from W tWEZ 3 13 3 13 3 18 ns 6 W to data delay tWED 13 13 18 ns OE to CAS hold time tOCH 5 5 5 ns CAS hold time to OE tCHO 5 5 5 ns OE precharge time tOEP 5 5 5 ns W pulse width (Hyper Page Cycle) tWPE 5 5 5 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 100 us 20,21,22 RAS precharge time (C-B-R self refresh) tRPS 90 110 130 ns 20,21,22 CAS hold time (C-B-R self refresh) tCHS -50 -50 -50 ns 20,21,22 |
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