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KM416C254D Datenblatt(PDF) 6 Page - Samsung semiconductor

Teilenummer KM416C254D
Bauteilbeschribung  256K x 16Bit CMOS Dynamic RAM with Extended Data Out
Download  36 Pages
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Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416C254D Datenblatt(HTML) 6 Page - Samsung semiconductor

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KM416C254D, KM416V254D
CMOS DRAM
AC CHARACTERISTICS (Continued)
Note) *1 : 5V only
Parameter
Symbol
-5*1
-6
-7
Units
Notes
Min
Max
Min
Max
Min
Max
Data set-up time
tDS
0
0
0
ns
9,19
Data hold time
tDH
8
10
15
ns
9,19
Refresh period (Normal)
tREF
8
8
8
ms
Refresh period (L-ver)
tREF
128
128
128
ms
CAS to W delay time
tCWD
32
32
42
ns
7,15
RAS to W delay time
tRWD
67
77
92
ns
7
Column address to W delay time
tAWD
42
47
57
ns
7
CAS precharge to W delay time
tCPWD
45
52
62
ns
7
CAS set-up time (CAS -before-RAS refresh)
tCSR
5
5
5
ns
17
CAS hold time (CAS -before-RAS refresh)
tCHR
10
10
10
ns
18
RAS to CAS precharge time
tRPC
5
5
5
ns
CAS precharge time (C-B-R counter test cycle)
tCPT
20
20
25
ns
Access time from CAS precharge
tCPA
28
35
40
ns
3
Hyper Page mode cycle time
tHPC
20
25
30
ns
11
Hyper Page read-modify-write cycle time
tHPRWC
57
66
81
ns
11
CAS precharge time (Hyper Page cycle)
tCP
8
10
10
ns
14
RAS pulse width (Hyper Page cycle)
tRASP
50
100K
60
100K
70
100K
ns
RAS hold time from CAS precharge
tRHCP
30
35
40
ns
OE access time
tOEA
15
15
20
ns
3
OE to data delay
tOED
13
13
18
ns
Output buffer turn off delay time from OE
tOEZ
3
13
3
13
3
18
ns
6
OE command hold time
tOEH
15
15
20
ns
Output data hold time
tDOH
5
5
5
ns
Output buffer turn off delay from RAS
tREZ
3
15
3
15
3
20
ns
6,12
Output buffer turn off delay from W
tWEZ
3
13
3
13
3
18
ns
6
W to data delay
tWED
13
13
18
ns
OE to CAS hold time
tOCH
5
5
5
ns
CAS hold time to OE
tCHO
5
5
5
ns
OE precharge time
tOEP
5
5
5
ns
W pulse width (Hyper Page Cycle)
tWPE
5
5
5
ns
RAS pulse width (C-B-R self refresh)
tRASS
100
100
100
us
20,21,22
RAS precharge time (C-B-R self refresh)
tRPS
90
110
130
ns
20,21,22
CAS hold time (C-B-R self refresh)
tCHS
-50
-50
-50
ns
20,21,22


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