Datenblatt-Suchmaschine für elektronische Bauteile |
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KM416RD8AD Datenblatt(PDF) 2 Page - Samsung semiconductor |
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KM416RD8AD Datenblatt(HTML) 2 Page - Samsung semiconductor |
2 / 64 page Page -1 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Rev. 1.01 Oct. 1999 Revision History Version 1.0 (July 1999) - Preliminary - Based on the Rambus Datasheet 1.0 ver. Version 1.01 (October 1999) On page 1 - Delete the part numbers of low power. On page 32 - Add the data of CNFGA Register @ Figure 28. On page 33 - Add the data of CNFGB Register @ Figure 29 and correct the CORG4..0 field of CNFGB register. On page 44 - Add the Tj value from TBD to Max. 100 °C @ Table 18. On page 46 - Add the Θ JC value from TBD to 0.2°C/Watt @ Table 20. On page 55 - Add the current values for 356MHz and 300MHz RDRAM device. |
Ähnliche Teilenummer - KM416RD8AD |
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Ähnliche Beschreibung - KM416RD8AD |
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