Datenblatt-Suchmaschine für elektronische Bauteile |
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BTA26 Datenblatt(PDF) 1 Page - Sirectifier Global Corp. |
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BTA26 Datenblatt(HTML) 1 Page - Sirectifier Global Corp. |
1 / 4 page BTB/BTA26 Discrete Triacs(Non-Isolated/Isolated) ABSOLUTE MAXIMUM RATINGS Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-220AB Tc = 100°C 25 A ITSM Non repetit ive surge peak on-state current (full cycle , Tj initial = 25°C) F = 60 Hz t = 16.7 ms 260 A F = 50 Hz t = 20 ms 250 I²t I² t Value for fusing tp = 10 ms 340 A²s dI/dt Critical rate of rise of on-state current IG = 2 x I GT , tr < 100 ns F = 120 Hz Tj = 125 °C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A PG(AV) Average gate p ower diss ipation Tj = 125 °C 1 W Tstg Tj Storage junction tempe rature range Operating junction temperature range - 4 0 to + 150 - 40 to + 125 °C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) s SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant BTA/BTB Unit CW BW IGT (1) VD = 12 V RL = 33 I - II - III MAX. 35 50 mA VGT I - II - III MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C I - II - III MIN. 0.2 V IH (2) IT = 500 mA MAX. 50 75 mA IL IG = 1.2 IGT I - III MAX. 70 80 mA II 80 100 dV/dt (2) VD = 67 % VDRM gate open Tj = 125°C MIN. 500 1000 V/µs (dI/dt)c (2) Without snubber Tj = 125°C MIN. 22 A/ms Dim. A B C D E F G H J K M N Q R Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Dimensions TO-220AB G T2 T1 T2 T1 G Symbol Ω 13 _ VDSM/VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°C VDRM/VRRM + 100 V |
Ähnliche Teilenummer - BTA26 |
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Ähnliche Beschreibung - BTA26 |
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