Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC5304LS Datenblatt(PDF) 1 Page - Sanyo Semicon Device |
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2SC5304LS Datenblatt(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page O3101TS KT/61598TS (KOTO) TA-1238 No.5883-1/4 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Triple Diffused Planar Silicon Transistor Inverter Lighting Applications Ordering number:ENN5883A 2SC5304LS SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 0 0 1V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 5 4V e g a t l o V e s a B - o t - r e t t i m EV O B E 9V t n e r r u C r o t c e ll o CIC 7A ) e s l u p ( t n e r r u C r o t c e ll o CI P C 4 1A n o i t a p i s s i D r o t c e ll o CPC 2W 5 3W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2079D [2SC5304] Features · High breakdown voltage (VCBO=1000V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. ˚C Tc=25˚C ˚C Electrical Characteristics at Ta=25˚C SANYO:TO-220FI (LS) r e t e m a r a Pl o b m y Ss n o t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 5 4 = E 0 =0 1A µ t n e r r u C f f o t u C r o t c e ll o CI S E C V E C R , V 0 0 0 1 = E B 0 =0 . 1A m e g a t l o V n o i t a r u t a S r o t c e ll o CV ) s u s ( O E C IC I , A m 0 0 1 = B 0 =0 5 4V t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 9 = C 0 =0 . 1A m e g a t l o V n o i t a r u t a S r e t t i m E - o t - r o t c e ll o CV ) t a s ( E C IC I , A 5 . 3 = B A 7 . 0 =0 . 1V e g a t l o V n o i t a r u t a S r e t t i m E - o t - e s a BV ) t a s ( E B IC I , A 5 . 3 = B A 7 . 0 =5 . 1V n i a G t n e r r u C C D h E F 1V E C I , V 5 = C A 3 . 0 =0 30 40 5 h E F 2V E C I , V 5 = C A 0 . 3 =0 1 e m i T e g a r o t St g t s IC I , A 5 . 3 = 1 B I , A 7 . 0 = 2 B A 4 . 1 – =5 . 2s µ e m i T ll a Ftf IC I , A 5 . 3 = 1 B I , A 7 . 0 = 2 B A 4 . 1 – =5 1 . 0s µ 1:Base 2:Collector 3:Emitter 0.7 2.55 2.55 1.2 0.9 0.75 1.2 4.5 2.8 12 3 10.0 3.2 |
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