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BZX100A Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BZX100A Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 10 page BZX100A_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 30 May 2007 4 of 10 NXP Semiconductors BZX100A Single Zener diode 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 7. Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF = 10 mA - - 0.9 V IF = 100 mA - - 1.1 V VZ working voltage IZ = 1 mA 95 - 105 V rdif differential resistance IZ = 1 mA - - 700 Ω IR reverse current VR = 76 V - - 0.2 µA SZ temperature coefficient IZ = 1 mA - 138 - mV/K Cd diode capacitance f = 1 MHz; VR =0V --70 pF Tj =25 °C (prior to surge) Tj =25 °C Fig 2. Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 3. Forward current as a function of forward voltage; typical values tp (s) 10−5 10−2 10−3 10−4 006aab048 102 10 103 PZSM (W) 1 VF (V) 0.6 1.0 0.9 0.7 0.8 006aab049 100 200 300 IF (mA) 0 |
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