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74AHCT373PW Datenblatt(PDF) 9 Page - NXP Semiconductors

Teilenummer 74AHCT373PW
Bauteilbeschribung  Octal D-type transparant latch; 3-state
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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74AHCT373PW Datenblatt(HTML) 9 Page - NXP Semiconductors

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74AHC_AHCT373_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 20 May 2008
9 of 17
NXP Semiconductors
74AHC373; 74AHCT373
Octal D-type transparant latch; 3-state
[1]
Typical values are measured at nominal supply voltage (VCC = 3.3 V and VCC = 5.0 V).
[2]
tpd is the same as tPHL and tPLH.
[3]
ten is the same as tPZH and tPZL.
[4]
tdis is the same as tPHZ and tPLZ.
[5]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
th
hold time
Dn to LE; see Figure 10
VCC = 3.0 V to 3.6 V
1.0
-
-
1.0
-
1.0
-
ns
VCC = 4.5 V to 5.5 V
1.0
-
-
1.0
-
1.0
-
ns
CPD
power
dissipation
capacitance
fi = 1 MHz;
VI = GND to VCC
[5]
-10
-
-
-
-
-
pF
74AHCT373; VCC = 4.5 V to 5.5 V
tpd
propagation
delay
Dn to Qn; see Figure 7
[4]
CL = 15 pF
-
4.0
8.5
1.0
9.5
1.0
11.0
ns
CL = 50 pF
-
5.2
9.5
1.0
10.5
1.0
12.0
ns
LE to Qn; see Figure 8
CL =15pF
[4]
-
4.3
12.3
1.0
13.5
1.0
15.5
ns
CL = 50 pF
-
5.5
13.3
1.0
14.5
1.0
17.0
ns
ten
enable time
OE to Qn; see Figure 9
CL = 15 pF
-
4.0
10.9
1.0
12.5
1.0
14.0
ns
CL =50pF
[4]
-
5.2
11.9
1.0
13.5
1.0
15.0
ns
tdis
disable time
OE to Qn; see Figure 9
CL = 15 pF
-
4.4
10.2
1.0
11.0
1.0
13.0
ns
CL = 50 pF
-
6.5
11.2
1.0
12.0
1.0
14.0
ns
tW
pulse width
LE HIGH; see Figure 8
[4]
6.5
-
-
6.5
-
6.5
-
ns
tsu
set-up time
Dn to LE; see Figure 10
3.5
-
-
3.5
-
3.5
-
ns
th
hold time
Dn to LE; see Figure 10
1.5
-
-
1.5
-
1.5
-
ns
CPD
power
dissipation
capacitance
fi = 1 MHz;
VI = GND to VCC
[5]
-12
-
-
-
-
-
pF
Table 7.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 11.
Symbol Parameter
Conditions
25
°C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min Typ[1]
Max
Min
Max
Min
Max


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