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BTA312X-600D Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BTA312X-600D
Bauteilbeschribung  12 A Three-quadrant triacs high commutation
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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BTA312X_SER_D_E_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 16 April 2007
2 of 12
NXP Semiconductors
BTA312X series D and E
12 A Three-quadrant triacs high commutation
3.
Ordering information
4.
Limiting values
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/
µs.
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BTA312X-600D
TO-220F
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220 ‘full pack’
SOT186A
BTA312X-600E
BTA312X-800E
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA312X-600D; BTA312X-600E
[1] -
600
V
BTA312X-800E
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 61 °C; see
Figure 4 and 5
-12
A
ITSM
non-repetitive peak on-state current
full sine wave; Tj =25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
-
95
A
t = 16.7 ms
-
105
A
I2tI2t for fusing
t = 10 ms
-
45
A2s
dIT/dt
rate of rise of on-state current
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
-
100
A/
µs
IGM
peak gate current
-
2
A
PGM
peak gate power
-
5
W
PG(AV)
average gate power
over any 20 ms period
-
0.5
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
125
°C


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