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74AHCT30D Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer 74AHCT30D
Bauteilbeschribung  8-input NAND gate
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74AHCT30D Datenblatt(HTML) 6 Page - NXP Semiconductors

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74AHC_AHCT30_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 26 June 2009
6 of 14
NXP Semiconductors
74AHC30; 74AHCT30
8-input NAND gate
10. Dynamic characteristics
CO
output
capacitance
-
4
-
-
---
pF
74AHCT30
VIH
HIGH-level
input voltage
VCC = 4.5 V to 5.5 V
2.0
-
-
2.0
-
2.0
-
V
VIL
LOW-level
input voltage
VCC = 4.5 V to 5.5 V
-
-
0.8
-
0.8
-
0.8
V
VOH
HIGH-level
output voltage
VI =VIH or VIL; VCC = 4.5 V
IO = −50 µA
4.4
4.5
-
4.4
-
4.4
-
V
IO = −8.0 mA
3.94
-
-
3.80
-
3.70
-
V
VOL
LOW-level
output voltage
VI =VIH or VIL; VCC = 4.5 V
IO =50 µA
-
0
0.1
-
0.1
-
0.1
V
IO = 8.0 mA
-
-
0.36
-
0.44
-
0.55
V
II
input leakage
current
VI = 5.5 V or GND;
VCC = 0 V to 5.5 V
-
-
0.1
-
1.0
-
2.0
µA
ICC
supply current
VI =VCC or GND; IO =0A;
VCC = 5.5 V
-
-
2.0
-
20
-
40
µA
∆ICC
additional
supply current
per input pin;
VI =VCC − 2.1 V; other pins
at VCC or GND; IO =0A;
VCC = 4.5 V to 5.5 V
-
-
1.35
-
1.5
-
1.5
mA
CI
input
capacitance
VI =VCC or GND
-
3
10
-
10
-
10
pF
CO
output
capacitance
-
4
-
-
---
pF
Table 6.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25
°C
−40 °Cto+85 °C −40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
Table 7.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7.
Symbol Parameter
Conditions
25
°C
−40 °C to +85 °C −40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
Min
Max
74AHC30
tpd
propagation
delay
A, B, C, D, E, F, G, H to Y;
see Figure 6 and 7
[2]
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
5.0
9.5
1.0
11.0
1.0
12.0
ns
CL = 50 pF
-
6.7
12.0
1.0
14.5
1.0
15.5
ns
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.6
6.5
1.0
7.5
1.0
8.0
ns
CL = 50 pF
-
4.9
8.0
1.0
9.5
1.0
10.5
ns


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