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74AHCT30D Datenblatt(PDF) 8 Page - NXP Semiconductors |
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74AHCT30D Datenblatt(HTML) 8 Page - NXP Semiconductors |
8 / 14 page 74AHC_AHCT30_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 26 June 2009 8 of 14 NXP Semiconductors 74AHC30; 74AHCT30 8-input NAND gate Test data is given in Table 9. Definitions for test circuit: RT = termination resistance should be equal to the output impedance Zo of the pulse generator. CL = load capacitance including jig and probe capacitance. Fig 7. Load circuitry for measuring switching times 001aah768 tW tW tr tr tf VM VI negative pulse GND VI positive pulse GND 10 % 90 % 90 % 10 % VM VM VM tf VCC DUT RT VI VO CL G Table 9. Test data Type Input Load Test VI tr, tf CL 74AHC30 VCC ≤ 3.0 ns 15 pF, 50 pF tPLH, tPHL 74AHCT30 3.0 V ≤ 3.0 ns 15 pF, 50 pF tPLH, tPHL |
Ähnliche Teilenummer - 74AHCT30D |
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Ähnliche Beschreibung - 74AHCT30D |
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