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BTA316B-600C Datenblatt(PDF) 7 Page - NXP Semiconductors |
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BTA316B-600C Datenblatt(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BTA316B_SER_B_C_E_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 19 April 2007 7 of 13 NXP Semiconductors BTA316B series B, C and E 16 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions BTA316B-600B BTA316B-800B BTA316B-600C BTA316B-800C BTA316B-600E BTA316B-800E Unit Min Typ Max Min Typ Max Min Typ Max dVD/dt rate of rise of off-state voltage VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 1000 - - 500 - - 60 - - V/ µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) =16A; without snubber; gate open circuit 20 - - 15 - - 5 - - A/ms VDM = 400 V; Tj = 125 °C; IT(RMS) =16A; dV/dt = 10 V/ µs; gate open circuit - - - - - - 8 - - A/ms VDM = 400 V; Tj = 125 °C; IT(RMS) =16A; dV/dt=1V/ µs; gate open circuit - - - - - - 12 - - A/ms tgt gate-controlled turn-on time ITM =20A; VD =VDRM(max); IG = 0.1 A; dIG/dt=5A/µs -2 - - 2 - -2 - µs |
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