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BTA412Y-800C Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BTA412Y-800C
Bauteilbeschribung  12 A three-quadrant triacs, insulated, high commutation, high temperature
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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BTA412Y_SER_B_C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2008
2 of 12
NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
2.
Pinning information
3.
Ordering information
4.
Limiting values
Table 1.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
main terminal 1 (T1)
SOT78D (TO-220)
2
main terminal 2 (T2)
3
gate (G)
mb
mounting base; isolated
12
mb
3
sym051
T1
G
T2
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BTA412Y-600B
TO-220
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220
SOT78D
BTA412Y-600C
BTA412Y-800B
BTA412Y-800C
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
BTA412Y-600B; BTA412Y-600C
[1] -
600
V
BTA412Y-800B; BTA412Y-800C
-
800
V
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 116 °C; see
Figure 4 and 5
-12
A
ITSM
non-repetitive peak on-state current
full sine wave; Tj =25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
-
140
A
t = 16.7 ms
-
153
A
I2tI2t for fusing
tp = 10 ms
-
98
A2s
dIT/dt
rate of rise of on-state current
ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
-
100
A/
µs
IGM
peak gate current
-
4
A
PGM
peak gate power
-
5
W


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