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BTA412Y-800C Datenblatt(PDF) 3 Page - NXP Semiconductors

Teilenummer BTA412Y-800C
Bauteilbeschribung  12 A three-quadrant triacs, insulated, high commutation, high temperature
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

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BTA412Y_SER_B_C_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 11 March 2008
3 of 12
NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
[1]
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/
µs.
PG(AV)
average gate power
over any 20 ms period
-
1
W
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
150
°C
Table 3.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
α = conduction angle
Fig 1.
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Fig 2.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
003aab810
0
4
8
12
16
0369
12
IT(RMS) (A)
Ptot
(W)
α= 180°
120
°
90
°
60
°
30
°
conduction
angle
(degrees)
form
factor
a
30
60
90
120
180
4
2.8
2.2
1.9
1.57
α
003aab811
0
40
80
120
160
1
10
10
2
10
3
number of cycles (n)
ITSM
(A)
ITSM
t
IT
Tj(init) = 25 °C max
1/f


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