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BTA316-600BT Datenblatt(PDF) 7 Page - NXP Semiconductors

Teilenummer BTA316-600BT
Bauteilbeschribung  16 A Three-quadrant triacs high commutation high temperature
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BTA316-600BT Datenblatt(HTML) 7 Page - NXP Semiconductors

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BTA316_SER_BT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 May 2007
7 of 12
NXP Semiconductors
BTA316 series BT
16 A Three-quadrant triacs high commutation high temperature
7.
Dynamic characteristics
Table 6.
Dynamic characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67 × VDRM(max);
Tj = 150 °C; exponential
waveform; gate open circuit
600
-
-
V/
µs
dIcom/dt
rate of change of
commutating current
VDM = 400 V; Tj = 150 °C;
IT(RMS) = 16 A; without
snubber; gate open circuit
8
-
-
A/ms
tgt
gate-controlled
turn-on time
ITM = 20 A; VD =VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
-2
-
µs
(1) T2
− G−
(2) T2+ G
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function of
junction temperature
Fig 8.
Normalized gate trigger current as a function of
junction temperature
Tj (°C)
−50
150
100
50
0
001aag168
0.8
1.2
1.6
VGT
0.4
VGT(25°C)
Tj (°C)
−50
150
100
050
001aag165
1
2
3
0
(1)
(2)
(3)
IGT
IGT(25°C)


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