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BTA416Y-600C Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BTA416Y-600C Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 12 page BTA416Y_SER_B_C_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 11 March 2008 2 of 12 NXP Semiconductors BTA416Y series B and C 16 A 3-quadrant triacs insulated, high commutation, high temperature 2. Pinning information 3. Ordering information 4. Limiting values Table 1. Pinning Pin Description Simplified outline Graphic symbol 1 main terminal 1 (T1) SOT78D (TO-220) 2 main terminal 2 (T2) 3 gate (G) mb mounting base; isolated 12 mb 3 sym051 T1 G T2 Table 2. Ordering information Type number Package Name Description Version BTA416Y-600B TO-220 plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78D BTA416Y-600C BTA416Y-800B BTA416Y-800C Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage BTA416Y-600B; BTA416Y-600C [1] - 600 V BTA416Y-800B; BTA416Y-800C - 800 V IT(RMS) RMS on-state current full sine wave; Tmb ≤ 108 °C; see Figure 4 and 5 -16 A ITSM non-repetitive peak on-state current full sine wave; Tj =25 °C prior to surge; see Figure 2 and 3 t = 20 ms - 160 A t = 16.7 ms - 176 A I2tI2t for fusing tp = 10 ms - 128 A2s dIT/dt rate of rise of on-state current ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/ µs IGM peak gate current - 4 A PGM peak gate power - 5 W |
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