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BTA312Y-800C Datenblatt(PDF) 7 Page - NXP Semiconductors

Teilenummer BTA312Y-800C
Bauteilbeschribung  12 A Three-quadrant triacs high commutation insulated
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BTA312Y_SER_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 September 2007
7 of 12
NXP Semiconductors
BTA312Y series C
12 A Three-quadrant triacs high commutation insulated
8.
Dynamic characteristics
Table 7.
Dynamic characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
dVD/dt
rate of rise of
off-state voltage
VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform;
gate open circuit
500
-
-
V/
µs
dIcom/dt rate of change of
commutating
current
VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; without snubber;
gate open circuit
20
-
-
A/ms
tgt
gate-controlled
turn-on time
ITM = 20 A; VD =VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs-
2
-
µs
(1) T2
− G−
(2) T2+ G
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function of
junction temperature
Fig 8.
Normalized gate trigger current as a function of
junction temperature
Tj (°C)
−50
150
100
050
001aab101
0.8
1.2
1.6
0.4
VGT
VGT(25°C)
Tj (°C)
−50
150
100
050
001aac669
1
2
3
0
(1)
(2)
(3)
IGT
IGT(25°C)


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