Datenblatt-Suchmaschine für elektronische Bauteile |
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FQP10N50CF Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
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FQP10N50CF Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page 4 www.fairchildsemi.com FQP10N50CF / FQPF10N50CF Rev. A Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FQP10N50CF for FQPF10N50CF Figure 10. Maximum Drain Current vs. Case Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes: ※ 1. V GS =0V 2. I D =250µA T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * Notes : 1. V GS = 10 V 2. I D = 5.0 A T J, Junction Temperature [ oC] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 DC 100ms 10ms 1ms 100 µs 10 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-SourceVoltage[V] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 DC 100ms 10ms 1ms 100 µs 10 µs Operation in This Area is Limited by R DS(on) * Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS, Drain-SourceVoltage[V] 25 50 75 100 125 150 0 2 4 6 8 10 12 T C, Case Temperature [ oC] |
Ähnliche Teilenummer - FQP10N50CF |
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Ähnliche Beschreibung - FQP10N50CF |
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