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FW203 Datenblatt(PDF) 1 Page - Sanyo Semicon Device

Teilenummer FW203
Bauteilbeschribung  Ultrahigh-Speed Switching Applications
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW203 Datenblatt(HTML) 1 Page - Sanyo Semicon Device

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FW203
Ordering number : EN5319A
Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-0100 No.5319-1/3
Package Dimensions
unit: mm
2129-SOP8
[FW203]
SANYO : SOP8
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
5A
Drain Current (pulse)
IDP
PW
≤10µs, duty cycle≤1%
48
A
Allowable Power Dissipation
PD
Mounted on a ceramic board
1.7
W
(1000mm
2
×0.8mm) 1unit
Total Dissipation
PT
Mounted on a ceramic board
2.0
W
(1000mm
2
×0.8mm)
Channel Temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
D-S Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate-Voltage Drain Current IDSS
VDS=30V, VGS=0
100
µA
Gate-to-Source Leakage Current IGSS
VGS=±16V, VDS=0
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=5A
5
8
S
Static Drain-to-Source
RDS(on)
ID=5A, VGS=10V
36
46
m
ON-State Resistance
RDS(on)
ID=5A, VGS=4V
58
78
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
550
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
330
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
120
pF
Continued on next page.
Features
• Low ON resistance
• Ultrahigh-speed switching.
• Composite type with two 4V-drive N-channel MOSFETs
facilitating high-density mounting.
• Matched pair capability.


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