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FDD3860 Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FDD3860
Bauteilbeschribung  N-Channel PowerTrench MOSFET
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD3860 Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
Electrical Characteristics T
J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
100
V
∆BV
DSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
98
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2.5
3.8
4.5
V
∆V
GS(th)
∆T
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
-11.4
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 5.9A
29
36
m
VGS = 10V, ID = 5.9A, TJ = 125°C
51
64
gFS
Forward Transconductance
VDS = 10V, ID = 5.9A
20
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 50V, VGS = 0V,
f = 1MHz
1310
1740
pF
Coss
Output Capacitance
100
130
pF
Crss
Reverse Transfer Capacitance
45
70
pF
Rg
Gate Resistance
f = 1MHz
1.6
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 50V, ID = 5.9A,
VGS = 10V, RGEN = 6Ω
16
29
ns
tr
Rise Time
10
21
ns
td(off)
Turn-Off Delay Time
24
39
ns
tf
Fall Time
7
15
ns
Qg
Total Gate Charge at 10V
VDD = 50V, ID = 5.9A
22
31
nC
Qgs
Gate to Source Charge
7.1
nC
Qgd
Gate to Drain “Miller” Charge
6.3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 2.0A
(Note 2)
0.7
1.2
V
VGS = 0V, IS = 5.9A
(Note 2)
0.8
1.3
trr
Reverse Recovery Time
IF = 5.9A, di/dt = 100A/µs
34
55
ns
Qrr
Reverse Recovery Charge
40
64
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300
µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 100V, VGS = 10V.
40°C/W when mounted on a
1 in2 pad of 2 oz copper
96°C/W
when
mounted
on a minimum pad.
a)
b)


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