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BTA40 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer BTA40
Bauteilbeschribung  40 A standard TRIACs
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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BTA40 Datenblatt(HTML) 2 Page - STMicroelectronics

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Characteristics
BTA40, BTA41, BTB41
2/9
Doc ID 7469 Rev 8
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
IT(RMS)
On-state rms current
(full sine wave)
TOP3
Tc = 95 °C
40
A
RD91 / TOP ins.
Tc = 80 °C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
F = 50 Hz
t = 20 ms
400
A
F = 60 Hz
t = 16.7 ms
420
I²tI²t Value for fusing
tp = 10 ms
1000
A²s
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 125 °C
50
A/µs
VDSM/VRSM
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25 °C
VDSM/VRSM +
100
V
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
8
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
IGT
(1)
VD = 12 V
RL = 33 Ω
I - II - III
IV
MAX.
50
100
mA
VGT
ALL
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ Tj = 125 °C
ALL
MIN.
0.2
V
IH (2)
IT = 500 mA
MAX.
80
mA
IL
IG = 1.2 IGT
I - III - IV
MAX.
70
mA
II
160
dV/dt(2)
VD = 67% VDRM gate open
Tj = 125 °C
MIN.
500
V/µs
(dV/dt)c(2)
(dI/dt)c = 20 A/ms
Tj = 125 °C
MIN.
10
V/µs
1.
Minimum IGT is guaranted at 5% of IGT max.
2.
for both polarities of A2 referenced to A1


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