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STX616-AP Datenblatt(PDF) 3 Page - STMicroelectronics |
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STX616-AP Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 8 page STX616 STX616-AP Electrical characteristics 3/8 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5% Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE =0) VCE = 980V VCE = 980V Tc = 125°C 50 0.5 µA mA VCE(sus) (1) Collector-emitter sustaining voltage (IB = 0) IC = 10mA 500 V VEBO Emitter-base voltage (IC = 0) IE = 1mA 12 V VCE(sat) (1) Collector-emitter saturation voltage IC = 0.2A IB = 40mA IC = 1A IB = 200mA 0.5 1 V V VBE(sat) (1) Base-emitter saturation voltage IC = 0.2A IB = 40mA IC = 1A IB = 200mA 1 1.4 V V hFE (1) DC current gain IC = 500µA VCE = 2V IC = 200mA VCE = 5V IC = 500mA VCE = 5V IC = 1.5A VCE = 5V 17 25 12 4 ton ts tf RESISTIVE LOAD Turn-on time Storage time Fall time VCC = 250V IC = 250mA IB1 = 65mA IB2 = -130mA 0.2 5 0.65 µs µs µs ton ts tf RESISTIVE LOAD Turn-on time Storage time Fall time VCC = 250V IC = 0.8A IB1 = 160mA IB2 = -0.4A 1 2.5 0.35 µs µs µs ts tf INDUCTIVE LOAD Storage time Fall time Vcl = 300V IC = 250mA IB1 = 65mA IB2 = -130mA L = 200 µH 5 0.5 µs µs ts tf INDUCTIVE LOAD Storage time Fall time Vcl = 300V IC = 0.8A IB1 = 160mA IB2 = -0.4A L = 200 µH 2.5 0.25 µs µs |
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