Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ680 Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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2SJ680 Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SJ680 2009-09-29 4 Case temperature Tc (°C) RDS (ON) – Tc Drain-source voltage VDS (V) IDR – VDS Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Vth – Tc Case temperature Tc (°C) PD – Tc Total gate charge Qg (nC) Dynamic input/output characteristics 0 −80 −40 0 40 80 120 160 1 2 3 4 5 6 Common source VGS = −10 V pulse test ID = −1.5 A −1.2 −1.0 −0.1 0 −1 −10 0.2 0.4 0.6 0.8 1 Common source Tc = 25°C pulse test VGS = 0 V −1 −3 −5 1 −0.1 −1 −10 −100 10 100 1000 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 0 −80 −40 0 40 80 120 160 1 2 3 4 5 Common source VDS = 10 V ID = 1 mA pulse test 0 0 40 80 120 160 10 20 30 40 −4 0 0 4 8 12 16 20 −8 −12 −16 −40 −80 −120 −160 Common source ID = −2.5 A Tc = 25°C pulse test VDS = −40 V −80 −180 VGS VDS |
Ähnliche Teilenummer - 2SJ680_09 |
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Ähnliche Beschreibung - 2SJ680_09 |
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