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6N80G-TA3-T Datenblatt(PDF) 1 Page - Unisonic Technologies |
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6N80G-TA3-T Datenblatt(HTML) 1 Page - Unisonic Technologies |
1 / 6 page UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R502-500.a 6.0 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N80 is a N-channel mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N80 is universally applied in high efficiency switch mode power supply. FEATURES * 6.0A, 800V, RDS(on) = 2.5Ω @VGS = 10 V * Improved dv/dt capability * Fast switching * 100% avalanche tested SYMBOL 1.Gate 3.Source 2.Drain 1 1 TO-220 TO-220F 1 TO-220F1 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 6N80L-TA3-T 6N80G-TA3-T TO-220 G D S Tube 6N80L-TF3-T 6N80G-TF3-T TO-220F G D S Tube 6N80L-TF1-T 6N80G-TF1-T TO-220F1 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
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